However, the preliminary processing to realize the direct-write EEPROM construction of FIG.s 10a & 10b is somewhat different. Alternatively, polysilicon could be selectively removed from every trench sidewall utilizing only the resist masks as a control to outline the discrete floating gates. In etching polysilicon materials cleanly between discrete floating gate structures, openings are created therebetween which is in a position to ultimately be crammed by a silicon wealthy nitride material pursuant to the further processing steps described beneath (rather than a silicon oxide as within the above-described approach). EEPROM array 10 is thus programmed by negatively charging the corresponding floating gates of selected reminiscence cells . This is completed by injecting electrons across an insulating layer surrounding the floating gate, conventionally from the substrate of the memory cell. 7, a second photoresist layer 90 is then fashioned on the barrier layer 80 corresponding to the primary area 10A of the substrate 10.
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6, a second polysilicon layer 70 is then deposited to cowl the construction as shown in FIG. In an exemplary embodiment, both the second polysilicon layer 70 and the first polysilicon layer forty are undoped polysilicon, so that iot 125m brookfield technology 2b only the second polysilicon layer 70 is proven in FIG. The second polysilicon 70 could be fashioned by a low-pressure chemical vapor deposition process.
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When Caps Lock is on, all alphabetic characters typed are in uppercase. Accompanying drawing 14 is depicted as the vertical DMOS unit girth of the cell density perform curve than A/W. Accompanying drawing 10B is depicted because the curve as the equal vertical MOSFET cell density of the function of unit interval. Accompanying drawing 10A is depicted as the curve as the equal vertical MOSFET cell density of the perform of mesa width. Accompanying drawing 8C has illustrated keyhole drawback of thick steel layers.
A gate dielectric layer fashioned on floor of the lower sidewall recess between the semiconductor substrate and the buried gate electrode. The methodology for fabricating a memory cell array according to declare 1 wherein the third line-shaped trenches are shallower than the first line-shaped trenches. The technique for fabricating a reminiscence cell array in accordance with declare eight wherein the epitaxial layer is epitaxial silicon layer. The technique for fabricating a memory cell array in accordance with declare 1 wherein the spacer comprises silicon nitride. The methodology for fabricating a memory cell array based on declare 1 wherein the second line-shaped trenches are cell insulator trenches. The method for fabricating a reminiscence cell array based on claim 1 wherein each of the primary line-shaped trenches is shallower than each of the second line-shaped trenches, and the primary and second line-shaped trenches are alternately arranged.
three.Y SB＜0.9 micron part I requires a sort of new technology to form the contact zone characteristic on this part in energetic ditch type DMOS transistor unit.If this if possible, solely make the most of the flexibility of photoetching remedy tools to set the boundary of this structure to distinguish and the littler attribute dimension of etching. Accompanying drawing 23 is depicted because the profile of SSA ditch kind DMOSFET, includes source unit array, grid bus, polysilicon ESD diode and edge termination. Accompanying drawing 9A is depicted because the profile of the step covering drawback of the steel level on the polysilicon gate bus of clarification within the ditch sort DMOSFET of routine. Accompanying drawing 5A-5F is depicted because the design rule of the table top of typical ditch type DMOSFET.Accompanying drawing 5A is depicted because the design rule of contact zone to ditch.Accompanying drawing 5B is depicted because the design rule of contact zone to supply electrode.Accompanying drawing 5C is depicted because the design rule of P+ contact zone to physique.Accompanying drawing 5D is depicted as the instance of grid supply short circuit.Accompanying drawing 5E is depicted as the example of the source electrode of not contact or insufficient contact.Accompanying drawing 5F is depicted as the not example of the physique of contact.